Abstract
Limitations in the very fast growth of 4H-SiC crystals are surveyed for a high-temperature gas source method. The evolution of macro-step bunching and void formation in crystal growth is investigated by changing the partial pressures of the source gases and crystal rotation speeds. The variation in macro-step formation depending on radial positions, where step-flow or spiral growth governs, of a grown crystal is also revealed. Based on the relation between growth conditions and macro-step bunching, a trade-off between growth rate enhancement and crystal quality and a method to improve such trade-off are discussed. Nitrogen at a high concentration under very high growth rates in the high-temperature gas source method is also investigated.
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