Abstract

Ultra-thin crystalline silicon (c-Si) solar cell suffers both from poor light absorption and minority carrier recombination at the contacts resulting in low contact selectivity. Yet most of the research focuses on improving the light absorption by introducing novel light trapping technique. Our work shows that for ultra-thin absorber, the benefit of optical enhancement is limited by low contact selectivity. Using simulation we observe that performance enhancement from light trapping starts to saturate as the absorber scales down because of the increase in probability of the photo-generated carriers to recombine at the metal contact. Therefore, improving the carrier selectivity of the contacts, which reduces the recombination at contacts, is important to improve the performance of the solar cell beyond what is possible by enhancing light absorption only. The impact of improving contact selectivity increases as the absorber thickness scales below 20 micrometer (μm). Light trapping provides better light management and improving contact selectivity provides better photo-generated carrier management. When better light management increases the number of photo-generated carriers, better carrier management is a useful optimization knob to achieve the efficiency close to the thermodynamic limit. Our work explores a design trade-off in detail which is often overlooked by the research community.

Highlights

  • Ultra-thin crystalline silicon (c-Si) solar cells offer versatile benefit for energy harvesting

  • The J-V curves are compared between direct metal contact and oxide selective contact

  • We have presented the comparison in performance for TiO2 and zinc oxide (ZnO) electron selective contact in the supplementary information (Fig. S1) to illustrate the similary of the selective contacts having similar band lineup in ideal condition

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Summary

Improving Contact Selectivity using Transition Metal Oxides

We can see that titanium oxide (TiO2) and zinc oxide (ZnO) have low conduction band offset, ΔEC, and high valence band offset, ΔEV with respect to Si, making these suitable for electron selective contact or hole blocking layer (HBL). NiO and CuAlO2 are p type semiconductors, where both extrinsic and intrinsic doping through cation vacancy is possible. All of these four materials have been studied as window layer or transparent conducting oxide (TCO) for photovoltaics[27,28,29,30] due to their optical transparency in the visible spectrum and distinct semiconducting properties. Evaluation and relative comparison of these materials from selective contact point of view was presented elsewhere[25]

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