Limitation of a giant amplification surge by photoinduced space charge accompanying an increase in the concentration of recombination centers in intrinsic threshold photoresistors with extracting contacts

Abstract

An analysis is made of the dependence of Ĝ on V under conditions of a giant surge of the photoelectric gain Ĝ as the concentration of recombination impurities N increases, where V is the applied voltage and Ĝ is the value of G at the maximum point of the function G(N). It is shown that as a result of the space charge induced by the optical radiation the function Ĝ(V) exhibits strongly nonmonotonic behavior. The optimum voltage Vopt applied to the sample is determined for which Ĝ(V) reaches the maximum Ĝmax. This nonmonotonic dependence of Ĝ on V does not correlate with heating of carriers or the lattice or by injection of charge from the contacts.