Abstract
Multi-element infrared sensors with charge injection device (CID) designed photosensitive cells in marginal operation are studied by means of computational modelling. The calculations and experiments are carried out mainly for real InAs focal plane arrays. The following parameters are included into the consideration: spectral range of the detector, CID-cell position with respect to the cold-shield window, maximum capacity of the charge-accumulating cell, charge accumulation time, radiant temperature and emissivity, contribution of the external noise, atmospheric transmittance, etc. The calculations take into account specific features of potential-well filling with thermally generated charge carriers in the semiconductor under photogeneration; simple semi-empirical expressions for this process are obtained. The main subject of the present study is the noise equivalent temperature difference of the infrared imaging device. The Burstein–Moss effect in highly doped semiconductor substrate, atmospheric absorption over short optical paths, radiant emissivity and geometric factors, all are found to significantly affect the detector performance.
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