Abstract
LiInSe 2 thin epitaxial layers were prepared by flash evaporation on {111}a-oriented GaAs substrates and investigated by reflection high energy electron diffraction. The overgrowth is characterized by one-dimensional epitaxy with preferred azimuthal orientation. In general, the LiInSe 2 thin films crystallize in the β-NaFeO 2 structure. In the substrate temperature range from 620 to 670 K a second phase with chalcopyrite structure was observed besides the β-NaFeO 2 structure.
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