Light-stimulated artificial synapse based on Schottky barrier modulated CVD Mos2 transistors

Abstract

Highly-parallel and energy-efficient neuromorphic computing exhibits high potential for future ultralow power electronics without the conventional constraints imposed the von Neumann architecture which physically separates memory and processor. Two dimensional materials offer the unique advantage of high efficient optoelectronics with heterogenous integration capability. Large-area chemical vapor deposited monolayer Mos2 has shown great potential in optoelectronic applications and its neuromorphic functions is yet to be explored. Here, a light-stimulated synaptic transistor based on CVD monolayer Mos2 enabled by Schottky barrier modulation has been demonstrated. The intrinsic mobility of the single-crystal Mos2 film grown directly on SiO2 substrate is 11.07 cm2/V·s and the fabricated device shows obvious photoresponse under UV-light exposure. The synaptic transistor under zero gate bias mimics versatile light-stimulated synaptic neuromorphic functions including excitatory postsynaptic current, short-term plasticity to long-term plasticity transformation and paired-pulse facilitation. In addition, the synaptic characteristics can be further modulated effectively by back-gate bias voltage, showing great potential in light-stimulated neuromorphic applications.