Abstract
A diffusion barrier structure is proposed to control the accuracies of the Zinc diffusion velocity and depth for lightly doped short-wave infrared (SWIR) InGaAs planar photodetectors. By employing scanning capacitance microscopy and scanning electron microscopy characterizations, the Zinc diffusion profiles were investigated. The introducing of a moderately doped interlayer effectively tailored the diffusion front with reduced depth. In0.53Ga0.47As/InP PIN photodetectors with different structures were fabricated and characterized. Compared with the typical structure, the barrier detector exhibited a significantly lower dark current as well as an approximately three times higher peak detectivity. These results indicated that the diffusion barrier structure is promising for the fabrication of SWIR InGaAs focal plane arrays with both low capacitance and reduced dark current.
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