Abstract
Porous synthetic opal possessing a three-dimensional photonic band structure of semimetallic type was impregnated with polycrystalline CdS. The photonic stop band in (111) direction was examined by means of photoreflection technique. Under cw laser excitation of semiconductor inclusions the reflectance of the system changes indicating a modification of photonic band structure. A possible mechanism is discussed. Numerical simulations within the framework of quasicrystalline approximation are given. PACS numbers: 42.70.Qs, 42.70.Gi
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