Abstract
Changes in the characteristics of amorphous silicon (a-Si) solar cells caused by light exposure were studied. The degradation ratio of the conversion efficiency of p-i-n a-Si solar cells caused by light exposure depends on the thickness of the i layer. A decrease in the fill factor was commonly observed, and in such cases the diode quality factor and shunt current density increased, which suggested a change in junction properties. It was shown that additional doping of the i layer with a small amount of boron prevents the decrease in conversion efficiency with light exposure. In a 1 year experiment on a 2 kW a-Si power generating system, a 10% decrease in conversion efficiency was observed (without additional boron doping).
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