Abstract
ABSTRACTThe changes in the absorption spectra of a-SiC films of varying bandgap were monitored as a function of light-soaking time. It was found that the greatest change in absorption occurred at an energy which was 0.55eV less than the energy of the bandgap. It is demonstrated that this could result from a band of states which remain fixed in energy with respect to one of the band edges as the bandgap changes.
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