Abstract
Silicon-based light-emitting diodes (LEDs) are fabricated using p-type silicon implanted with C <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> ions and postannealed at 1000 °C in flowing nitrogen. The ion implantation is carried out at ambient temperature (AT) and 400 °C to investigate the influence of high-temperature implantation on the luminescence of LEDs. Transmission electron microscopy shows a near-surface layer of amorphous silicon (a-Si) with nanoscale carbon-rich inclusions in both ambient and heated targets while an additional polycrystalline Si layer is observed in the heated target only. A Schottky diode is constructed from C <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -implanted Si (C:Si) with a semitransparent gold layer on the implanted surface and aluminum on the back of the target. Contact firing at 400 °C in flowing nitrogen is used to optimize diode performance. Turn-ON voltage is determined to be about 3 V for all devices. Electroluminescence (EL) spectra show visible orange-red emission indicating luminescence primarily due to a-Si and Si nanoparticles in the LEDs fabricated from C:Si implanted at AT. The high-temperature samples produced EL attributed to a-Si and porous silicon carbide.
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