Abstract
The Pt/CeO2/Nb:SrTiO3 heterostructure that exhibits excellent resistive switching (RS) behavior of a maximum RS ratio of 3 × 104, good retention and multilevel memory is prepared. Obvious photoresponse was observed in this device under the illumination of a laser beam of 405 nm wavelength, which exhibits significant switching characteristics at high resistance state. Both light-controlled RS and voltage-controlled photoresponse are demonstrated in this device. Such RS and photoresponse characteristics can be attributed to the Schottky barrier of Pt/CeO2 interface and the electrons trapping/detrapping by oxygen vacancies near the interface. Our work demonstrated feasibility for making multilevel RS memories and for use in multifunctional photoelectric sensors.
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