Abstract
Light assistance and construction of heterojunctions are both promising means to improve the room temperature gas sensing performance of MoS2 recently. However, enhancing the separation efficiency of photo-generated carriers at interface and adsorption ability of surface have become the bottleneck problem to further improve the room temperature gas sensing performance of MoS2-based heterojunctions under light assistance. In the present study, a novel direct Z-scheme MoS2/SnO2 heterojunction was designed through crystal facets engineering and its room temperature gas sensing properties under light assistance was studied. It was found that the heterojunction showed outstanding room temperature NO2 sensing performance with a high response of 208.66 toward 10 ppm NO2, together with excellent recovery characteristics and selectivity. The gas sensing mechanism study suggested that high-energy {221} crystal facets of SnO2 and MoS2 directly formed Z-scheme heterojunction, which could greatly improve the separation efficiency of photo-generated carriers with high redox capacity. Moreover, {221} facets greatly enhanced adsorption ability towards NO2. This work not only opens up the application of Z-scheme heterojunctions in gas sensing, which will greatly promotes the development of room temperature light-assisted gas sensors, but also provides a new idea for the construction of direct Z-scheme heterojunctions through crystal facets engineering.
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