Abstract
This paper presents the results of the dose dependencies of the light sum accumulation in ZnSe single crystals at a different X-ray excitation at 85 K. The values of light sum accumulation at different deep traps were determined from the thermally stimulated luminescence and conductivity curves. It was confirmed that the accumulated light sum is uniquely determined by the dose of radiation only, that is, the product of the intensity of excitation by the time of X-ray exposure. The same result is also given by the theoretical consideration of the kinetics of the light sum accumulation on deep traps for a multicenter model of crystal phosphors.
Highlights
Zinc selenide (ZnSe) belongs to wide-bandgap materials of AIIBVI type and is a well-studied material [1,2,3]
A comprehensive experimental study of X-ray conductivity (XRC), X-ray luminescence (XRL), phosphorescence (Ph), and conduction current relaxation (CCR) was carried out; the main focus was on the studies of thermally stimulated conductivity (TSC) and luminescence (TSL) and their dose dependencies at different intensities of X-ray excitation
In ZnSe single crystals, the TSL curves, when detected on two luminescence bands (630 and 970 nm), and TSC curves have a similar character. It indicates that the peaks in the TSL and TSC are due to delocalization of the carriers from a trap to a zone of their subsequent recombination on both types of the recharged luminescence centers (630 and 970 nm)
Summary
Zinc selenide (ZnSe) belongs to wide-bandgap materials of AIIBVI type and is a well-studied material [1,2,3]. High value of the effective atomic number Zef = 32 and a band gap width Eg = 2.7 eV (at 300 K), as well as the technology for growing high-quality single crystals with low concentrations of uncontrolled impurities and high material resistivity at ∼ 1010 – 1014 Ohm cm make zinc selenide a promising material for creating X-ray semiconductor detectors that do not require cooling [7]. It should be noted that the resistivity of ∼ 1014 Ohm cm in ZnSe crystals means that the concentration of free electrons in the conduction band does not exceed 103 cm−3 at room temperature. The kinetics of luminescence and conductivity in the crystal phosphors substantially depend on the concentration of various luminescence centers and on the concentrations of various traps. As a rule, contain a set of traps and several luminescence centers, it is necessary to verify this ratio experimentally
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