Abstract
Light position sensitive silicon detector (PSD) of surface barrier type has been made from a N-type epitaxial silicon wafer, in which the epitaxial layer is used as the charge dividing resistive layer. The surface of the epitaxial layer is very clean and at the same time defects in the epitaxial layer is very small compared with the silicon layer produced by using the ion implantation technique. Moreover, uniformity of resistivity of the epitaxial layer is very good. These characteristics are favorable to use the epitaxial layer as the charge dividing resistor of the PSD.
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