Year-end Sale % OFF 
Abstract
Photocurrent in phosphorous-doped CVD diamond film of the bandgap of 5.5eV with the density of 2×1018cm−3 decreases with increasing photon energy in the energy range higher than 5.8eV at room temperature (RT). The photocarrier life time is 0.3ms at the excitation energy of 5.8eV and decreases with increasing excitation energy. These show that the photocarriers, ascertained to be electrons by the Hall effect of the photocurrent, are trapped near the surface. The life time of photo-excited holes in Boron-doped CVD diamond film with the density of 9×1017cm−3 is 35ms at RT and decreases with decreasing Boron density, which is explained from the relation between the Fermi energy and the density.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
