Light induced suppression of Kondo effect at amorphous LaAlO3/SrTiO3 interface

Abstract

We report photoelectric properties of two-dimensional electron gas (2DEG) at an amorphous LaAlO3/SrTiO3 interface. Under visible light illumination (650 nm), an enhancement of electric conductivity is observed over the temperature range from 2 to 300 K. Particularly, a resistance upturn appearing below 25 K, which is further proved to from the Kondo effect, is suppressed by the 650 nm visible light. From the results of light-assisted Hall measurements, light irradiation increases the carrier mobility rather than carrier density in the Kondo regime. It is suggested that light induces the decoherence effect of localized spin states, hence the electron scattering is weakened and the carrier mobility is improved accordingly. Moreover, the enhancement of electrical conductivity by visible light verifies that in-gap states located in the SrTiO3 side of the interface play an important role in the electrical transport of the amorphous SrTiO3-based oxide 2DEG system. Our results provide deeper insight into the photoinduced effects in the 2DEG system, paving the way for the design of optoelectronic devices based on oxides.