Abstract
The Pd doped amorphous carbon (a-C:Pd) films were deposited on n-Si substrates with a native SiO2 layer using direct current magnetron sputtering. The light-induced spatial sensitivity of the resistance of the a-C:Pd/SiO2/Si structure was investigated. It is found that the a-C:Pd/SiO2/Si shows a huge resistance change (∼15 000%) when the different positions of the sample surface were illuminated by a laser. The light-induced spatial sensitivity of the resistance of the a-C:Pd/SiO2/Si is attributed to the eminent photosensitivity of the a-C:Pd/SiO2/Si structure which is caused by the Pd doping and the different carrier density distribution in the illuminated and unilluminated regions.
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