Abstract
The lifetime of the excited charge carriers in Rh-doped BTO crystals is characterized by measuring the time-resolved photoinduced absorption (PIA) after nanosecond pulse excitation from a frequency doubled Nd:YAG laser (λ=532 nm). It was found that the Rh-addition in the BTO structure slows down the relaxation decay in comparison with non- doped BTO, which is attributed to additional trapping centers related to the rhodium dopant. The experimental curve is well fitted by a double-exponential decay which is ascribed to the presence of two different shallow traps contributing to the charge transport and recombination mechanisms in Rh-doped BTO crystal.
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