Abstract
We have studied the light induced rapid thermal diffusion of boron atom in silicon. The samples were heated by the rapid thermal processor. We have carried out spreading resistance and deep level transient spectroscopy (DLTS) measurements. The impurity distribution profile is much shallower and steeper than that of conventional thermal diffusion and the diffusion depth can be controlled to 0.1 μm. Several peaks in the deep level transient spectra were detected and the density of these defects ranges from 0.5×1012 to 5.6×1012 /cm3. The passivation and annihilation of these defects have been studied. We have also made the planar diode whose diameter is 500 μm. The reverse current and the back breakdown voltage of the planar diode are 10-9 A and 80 V respectively.
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