Abstract
AbstractWe report on our observations of light-activated passivation (LIP) of Si surfaces by iodine-ethanol (I-E) solution. Based on our experimental results, the mechanism of passivation appears to be related to dissociation of iodine by the photo-carriers injected from the Si wafer into the I-E solution. The ionized iodine (I−) then participates in the formation of a Si-ethoxylate bond that passivates the Si surface. Experiments with a large number of wafers of different material parameters indicate that under normal laboratory conditions, LIP can be observed only in some samples–samples that have moderate minority-carrier lifetime. We explain this observation and also show that wafer cleaning plays an extremely important role in passivation.
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