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Abstract
Amorphous hydrogenated silicon suboxides (a-SiOx:H) were deposited by plasma enhanced chemical vapor deposition from the source gases SiH4, H2, and CO2. The band gap of the samples can be tuned from 1.9 to 3.0 eV by varying the oxygen content from 0 to 50 at. %. H-effused samples were irradiated by ultraviolet laser pulses with intensities up to 480 mJ/cm2. The structural changes and the crystallization behavior were investigated as a function of oxygen content and laser intensity. A decrease of the melting threshold by a factor of two with increasing oxygen content (0–44 at. %) was observed for the SiOx samples. Above the respective melting thresholds, not only a deterioration of the structural properties but also indications of a segregation of Si crystallites were found. Raman spectroscopy and transmission electron microscopy gave evidence for the existence of Si crystallites up to oxygen contents of 40 at. %. The crystal size reached an optimum for oxygen concentrations between 10 and 30 at. %.
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