Abstract
We report the observation of $^{69}\mathrm{Ga}$ NMR light induced hyperfine shifts at $6\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ in semi-insulating $\mathrm{GaAs}$ detected by optically polarized nuclear magnetic resonance in a magnetic field of $4.7\phantom{\rule{0.3em}{0ex}}\mathrm{T}$. The main features of the observed shift are a systematic change in the absolute shift value as the irradiation time is increased, and the sign of the hyperfine shift changes with polarization. The shift dependence on irradiation time can be understood as a combination of the hyperfine interaction of localized electrons with the surrounding nuclear spins and nuclear spin diffusion.
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