Abstract
A-Si/a-Si two-stacked tandem junction solar cell submodules were optimized on the textured SnO2 substrate. The highest module efficiency of 9.3% was obtained. The light-induced degradation of a-Si two-stacked tandem junction solar cells was simulated by using two types of degradation models (bond-breaking model and hole trapping model). In each case, the initial degradation of the tandem type cell can be well simulated. By optimizing the device parameters by using the computer simulation and adopting these results for the cell fabrication, the stable tandem type submodule of less than 3% degradation after 100h sunlight irradiation will be obtained.
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