Abstract
ABSTRACTModulated photocurrent (MPC) was employed to study metastable deep defect creation and annealing in low Ge fraction a-Si,Ge:H alloys (Ge fractions below 10at.%). These MPC spectra reveal two distinct bands of deep defects identified as neutral Si and neutral Ge dangling bonds. Upon heating in the dark from a strongly light degraded state, these are reduced in direct competition to each other, therefore implying a global reconfiguration mechanism. We have extended our studies to compare purely thermal annealing with light-induced annealing in these alloys. We have found that the relative anneal rate for the two types of defects differs from the case of purely thermal annealing. This therefore tends to rule out models in which the rate limiting step during annealing comes from the release of the mediating entity from a remote site.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
