Abstract
We report the results of a study of light-induced annealing of dangling bonds, as well as their light-induced creation in He-diluted glow discharge a-Si:H with a large amount of hydrogen at room temperature (RT) and at 75°C, by using an electron spin resonance (ESR) technique. Under illumination 0.7 W/cm2 at room temperature, dangling bonds are created by prolonged illumination, and their density tends to saturate. On the other hand, under strong illumination (1.6 W/cm2) at room temperature, dangling bonds are initially created and then photoannealed after 5 min of illumination. These results for He-diluted glow discharge samples are discussed and compared with those for standard and H2-diluted glow discharge samples.
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