Abstract
In this paper we briefly review the main experimental and theoretical aspects of the spin-dependent recombination in dilute nitride GaAsN point interstitial defects leading to a large contrast between the photoluminescence intensity under circularly and linearly polarized light excitations as well as to the implementation of a chiral photodetector. We discuss the interplay of the spin-selective capture of free electrons in deep paramagnetic Ga2+ interstitial defects and the hyperfine coupling among the defect nucleus and the bound electron. These factors combined confer GaAsN the capability of discriminating the handedness of an incident light beam.
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