Abstract
AbstractA SPICE model of a-SiC:H/ a-Si:H pin/pin detector with voltage controlled spectral sensitivity is presented. The equivalent electric circuit able to describe the behavior of the multilayer structure under non-uniform illumination is composed of two series connected diodes, representing the pin structures, with two nonlinear current sources in parallel, representing the photogeneration for different steady state RGB illumination, with their value depending also on the thickness of the absorber layer and the built-in potential of the diodes. This device represents the 1D model of the LSP (Laser Scanned Photodiode) and may be interconnected in a 2D array trough resistors, modeling the high resistivity of the a-SiC:H layers. Electrical simulations were performed for different transducer configurations and illumination conditions and compared with the experimental data. The influence of the lateral and transverse resistors and built-in potential of the diodes on sensor parameters like spatial resolution, and signal amplitude are analyzed. A physical model supported by the electrical simulation gives insight into the methodology used for image representation and color discrimination.
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