Abstract
The light extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes (FS-FCLEDs) using two-step roughening methods is investigated. The output power of LEDs fabricated by using one-step and two-step roughening methods are compared. The results indicate that two-step roughening methods show more potential for light extraction. Compared with flat FS-FCLEDs, the output power of FS-FCLEDs with a nanotextured hemisphere surface shows an enhancement of 90.7%.
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