Abstract
Polarization-dependent light extraction efficiency (LEE) of AlGaN based flip-chip deep ultraviolet light emitting diode (peak emission at 280 nm) with embedded periodic photonic structure (PPS), surface PPS and double-sided PPS configuration have been studied by utilizing three-dimensional finite-difference time-domain (3D FDTD) method. Among the three considered configurations, double-sided PPS has been found to possess the maximum improvement in LEE, followed by embedded PPS configuration. The surface PPS offers the least LEE improvement among the three configurations with reference to the conventional deep-UV LED structure. The respective improvements for TE, TM and overall LEE have been found to be around 128.37%, 59.18% and 99% for the double-sided PPS as compared to the conventional deep-UV LED.
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