Abstract
Various micro- and nanoscale structures have been incorporated into GaN-based light-emitting diodes (LEDs) by diverse techniques to improve the efficiency. Nanosphere lithography (NSL) has proved to be a low-cost and high mass production technique to make features in nanoscale. In this chapter, we review the recent advances of efficiency improvement of GaN-based LEDs by using NSL-derived nanostructures. We introduce the representative fabrication process of nanostructure by NSL method. We provide an overview of the current application of nanostructure in the efficiency enhancement of GaN-based LEDs. A new application of highly ordered nanostructures on optoelectronic devices including LEDs and lasers is also presented. Finally, a perspective on the future development of GaN-based LEDs and other optoelectronic devices by using NSL is addressed.
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