Abstract
The enhancement of light extraction efficiency for thin-film-flip-chip (TFFC) InGaN QWs LEDs with GaN microdomes on n-GaN layer was studied. The three dimensional FDTD method was used to calculate the light extraction efficiency for the TFFC InGaN QWs LEDs emitting at visible spectral regime, as compared to that of the conventional TFFC InGaN QWs LEDs. The calculation indicates significant dependence of the p-GaN layer thickness on the light extraction efficiency. Significant enhancement of the light extraction efficiency (2.5-2.7 times for λpeak=460nm and 2.7- 2.8 times for λpeak=550nm) is achievable from LEDs with GaN micro-domes with optimized micro-dome diameter and height.
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