Abstract
Shuming Chen and co-workers develop inverted tandem quantum dot light-emitting diodes (QLEDs) with efficiencies of over 100 cd A−1. The devices described in article number 1700610 use PEDOT:PSS/ZnMgO as the inter-connecting layer (ICL) and reach efficiencies comparable with those of phosphorescent OLEDs. The results demonstrate an ICL and fabrication methods that are able to boost the performances of QLEDs.
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