Abstract
We present light emitting diode with two-dimensional photonic crystal structure prepared by interference lithography in the light emitting diode surface with an emission maximum at 845 nm. Applied two-dimensional photonic crystal structure improved light extraction efficiency for more than 30 %. The photonic crystal light emitting diode surface morphology was analyzed by atomic force microscope. The enhanced extraction efficiency of the photonic crystal diode was documented from L(I) dependencies from the near-field studies.
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