Abstract
We report here the light emission from IR interband-cascade (IC) Type-II-super lattice LED structures. We employed two different IC epitaxial structures for the LED experiments consisting of 9 or 18 periods of active super lattice gain regions separated by multilayer injection regions. The light output (and the voltage drop) of the LEDs is observed to increase with increase of number of IC active regions in the device. The voltage drop decreases with increase of mesa size and light emission increases with mesa sizes. We have made 8x7 2-D LED array flip-chip bonded to fan out array. The black body emissive temperature is 650 and 1050 K for LED operation at room and liquid nitrogen temperature respectively. A comparison of different IR sources for scene generation is presented.
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