Abstract
AbstractThe values of the absorption coefficient in coupled Si/SiGe and Si/SiGeC nanostructures are calculated for quasidirect no‐phonon transition due to the momentum spread of electrons spatially confined in ultrathin layers. The values in quantum dots are found to be as large as that in bulk GaAs. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 30: 352–355, 2001.
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