Abstract
As many reports show that the InGaN quantum wells grown on semipolar substrate have better efficiency in the green spectrum, it is important to understand the light emission properties of these semipolar quantum wells. In this paper, we have studied the optical characteristics of a semipolar InGaN/GaN quantum well with different growth orientations. Also, the most common growth directions such as (101¯3¯) and (112¯2) planes are studied in details. The self-consistent Poisson and 6×6 k⋅p Schrödinger solver has been applied to study the band structure of the semipolar InGaN-based quantum well. We find that the light emission polarization ratio has a very interesting switching behavior under different conditions of indium compositions, quantum well widths, and injection carrier densities. Our results show that the semipolar InGaN quantum well has a potential to be a polarized light source under certain conditions.
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