Abstract
Sn/Ge multi-quantum well diodes integrated on Si were grown pseudomorphically on Ge virtual substrates on Si using molecular beam epitaxy. Temperature-dependent electroluminescence analyses were conducted on these devices across a range of temperatures, from 290 K to 12 K. This analysis identified four distinct energy transitions across the entire temperature range. Two of the peaks were observed at high temperatures and were no longer discernible as the temperature decreased. The remaining two peaks were only measured at low temperatures. By analyzing them with a Ge reference diode, one of the peaks was identified as a defect peak. The intensity of the other peak increased as the temperature decreased, which is consistent with the behavior of a direct transition in an indirect semiconductor material.
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