Abstract
Erbium atoms at an arsenic-terminated Si(111) surface can be made to emit light at the 1.55 μm wavelength associated with an internal transition in the Er3+ ion. The As-terminated surface prepared under ultrahigh vacuum conditions has a surface recombination velocity of 50 cm s−1 and partially suppresses competing nonradiative recombination mechanisms. Following the deposition of Er, its characteristic light emission is observed only after oxygen reacts with the surface. The intensity of the light emitted by Er increases significantly upon cooling from 310 to 215 K. No light emission was observed from Er atoms deposited on 7×7 or H-terminated surfaces.
Highlights
This article was downloaded from Harvard University's DASH repository
In bulk Si the excitation of Er occurs by the transfer of energy
Certain aspects of the atomic scale environment of optically active Er atoms have been determined by extended x-ray absorption fine structure measurements
Summary
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