Abstract
Summary form only given.InGaN quantum dot (QD) structure has attracted much attention because the lasers with InGaN QDs embedded in the active layer have lower threshold currents and narrower emission spectra than conventional lasers. To fabricate InGaN QD structure, there are two methods: self-assembled technique and selective area growth (SAG) technique. A few reports have been conducted on the SAG of InGaN. In this paper we report on fabrication of InGaN QDs using SAG on a SiO/sub 2/ patterned substrate. A micro-photoluminescence (micro-FL) image with spatial resolution of 150 nm successfully demonstrated light emission from individual QDs on the top of GaN pyramids.
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