Abstract
AbstractIn this study we report on the light‐emission characteristics of Si nanocrystals formed at the initial stages of anodization of bulk crystalline Si in the transition regime using extremely short pulses of anodic current. A considerable enhancement and a red‐shift of the photoluminescence (PL) peak of the as‐grown films under prolonged laser illumination in atmosphere was observed. Ageing or thermal oxidation in atmosphere at 300 °C caused similar red‐shift and significant enhancement of PL relative to the as‐grown films. In all cases the enhancement and the red‐shift of the PL coincided with the appearance of O2‐Si‐H2 and O2‐Si‐H(OH) stretching modes in the Fourier‐Transform‐Infra‐Red (FTIR) absorption spectra. Oxidation in dry oxygen at 900 °C caused red‐shift of PL without enhancement. Finally removal of the oxide caused blue shift of PL. All these observations are discussed in the context of the quantum confinement model. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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