Abstract
The annealing mechanism of surface states in the gallium arsenide metal semiconductor field-effect transistor (GaAs MESFET) is investigated by measuring the light-emission characteristics and excess gate currents generated by hot-carriers. Nonuniform light emission is observed when the Schottky junction is reverse biased, and the nonuniformity is increased with temperature. On the other hand, uniform and strong emission is observed under RF operation even when the device is biased with a deep pinch-off condition. The reverse and forward Schottky current caused by RF swing may not be a main emission mechanism under RF operation. Light emissions due to impact ionization and thermionic field emission are observed separately. The light intensity of the thermionic field emission has a weak temperature coefficient, while that of the impact ionization has a strong negative temperature coefficient. The decreasing rate of the surface states depends on the intensity and the distribution of the light emission during the operation.
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