Abstract
We investigated photoconductive gratings in the resonant semiconductor layers as light-controlled polarizers for the millimeter (MM) waves. We compared the effects of strip-like, wire-like, and fin-like gratings excited by the red light and the IR radiation in Silicon wafers, respectively. The fin-like gratings are shown to be the preferred structures that can operate at the limited light intensity. The light-sensitive shift of maxima of transmitted power and polarizing efficiency towards the lower frequency band is observed. The effect makes photoconductive gratings and similar patterns potentially suitable for the design of light-controlled frequency-tuning and frequency-modulating components of resonant quasi-optical devices.
Highlights
Optical control of THz and MM-wave quasi-optical beams is a promising technique for ultra-fast modulation, steering, focusing, and other processing of electromagnetic radiation [1,2,3,4,5]
The aim of this work is to investigate the effects of photoconductive gratings in a resonant semiconductor layer created by light of moderate intensity and operated as lightcontrolled polarizers for the MM-wave beams
Unlike the former research, the primary goal of this work is the analysis of the interplay between the effects of transmission, reflection, scattering, and absorption of electromagnetic waves under the mildly resonant conditions in a semiconductor wafer with moderate periodic spatial variation of photoconductivity and, complex dielectric constant, respectively, which is supposed to be just sufficient for the emerging functionality of structures as the light-controlled polarizers of MM-wave beams
Summary
Optical control of THz and MM-wave quasi-optical beams is a promising technique for ultra-fast modulation, steering, focusing, and other processing of electromagnetic radiation [1,2,3,4,5]. The aim of this work is to investigate the effects of photoconductive gratings in a resonant semiconductor layer created by light of moderate intensity and operated as lightcontrolled polarizers for the MM-wave beams. Unlike the former research, the primary goal of this work is the analysis of the interplay between the effects of transmission, reflection, scattering, and absorption of electromagnetic waves under the mildly resonant conditions in a semiconductor wafer with moderate periodic spatial variation of photoconductivity and, complex dielectric constant, respectively, which is supposed to be just sufficient for the emerging functionality of structures as the light-controlled polarizers of MM-wave beams
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