Abstract
The emission pattern of Light-Emitting Diodes (LEDs) is Lambertian, which requires secondary optics to improve directionality. In addition, Gallium Nitride (GaN) based LEDs and micro-LEDs (μLEDs) have low outcoupling efficiency due to the high refractive index difference between air and GaN. Here, we experimentally investigate the impact of introducing a simple design of aluminum (Al) nanoparticles arrays (metasurfaces) to control the far-field emission of InGaN green emitting quantum wells (MQWs). This tailoring of emission originates from the near-field coupling between the InGaN MQWs and the resonant nanoparticles. Fourier microscopy measurements reveal that the period of the Al array controls the angular photoluminescence (PL) emission pattern. Furthermore, we obtain a five-fold enhancement of the collected outcoupled light intensity by implementing Al metasurfaces to the InGaN MQWs.
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