Abstract
An obvious resistive switching (RS) was observed in BaTiO/3FeMn/BaTiO3 (BFB) trilayer films under different conditions. The RS effect was enhanced in light irradiation and restrained in magnetic field. The ratio of high resistance to low resistance of samples annealed at 500 °C is larger than 1500, and the samples showed a good stability. SET and RESET voltages decrease with increasing illumination intensity, but the ON/OFF ratio showed an inverse tendency. Conduction mechanisms in low resistance and high resistance were determined to be Ohmic and space charge limited conduction (SCLC) mechanism, respectively. A redistribution of oxygen vacancies and bound magnetic polaron (BMP) were used for explanation of the mechanism of RS behavior in this system under light irradiation and magnetic field, respectively.
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