Abstract
In the present study, we theoretically investigate the far infrared (FIR) spectrum of clusters formed by AlxGa1−xAs/GaAs, GaN/AlN, InSb/GaSb, and ZnSe/CdSe semiconductor hetero-structure quantum dots (QDs). The clusters are obtained by circle packing disc-shaped QDs in a square domain. The close spacing effect has previously been observed by experiment. For a given square area, we analyze the effects of the externally applied magnetic field (intensity and direction) on the FIR absorption coefficient for different QD packing values. The finite difference method is used to solve the two-dimensional Schrödinger equation describing the QD clusters in magnetic fields.
Highlights
Semiconducting quantum dots (QDs) are artificial nanostructures that typically consist of up to 109 atoms
We have investigated the far infrared (FIR) of QD clusters with a number of 1–9 dots in a square domain in the limit of low temperatures
The analyzed QD clusters are formed by AlxGa1−xAs/GaAs, GaN/AlN, InSb/GaSb, and ZnSe/CdSe semiconductor heterostructures
Summary
Semiconducting quantum dots (QDs) are artificial nanostructures that typically consist of up to 109 atoms. Different physical properties of these systems such as spin-wave excitations, the electronic spectrum, thermoelectric properties, charge transport, and inter-subband transitions attracted researchers’ attention These structures which have potential applications in various electronic devices such as solar cells, light-emitting diodes, and magnonic filters have been examined. In this category, according to our knowledge, the optical properties of two-dimensional quantum dot clusters with a fixed total surface area have not been considered. To the best of our knowledge, optical properties of two-dimensional quantum dot clusters with fixed total surface areas as well as their closely spaced structures have not so far been investigated employing the density matrix approach.. We calculated the far infrared (FIR) absorption coefficient for transition between the lowest two electronic energy levels by using the density matrix approach
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