Abstract
Liquid-phase crystallization of Si films on textured glass by line-focus diode laser produces a material with large high-quality grains of several hundred micrometers in width and up to centimeters in length, similar to the films crystallized on planar glass. A combination of glass texturing, rear Si texturing, white paint rear reflector, and a front moth-eye antireflection foil on a 7-μm absorber results in significant broadband absorption enhancement in the Si film with potential short-circuit current densities in solar cells of $\text{27.8} \;\text{mA/cm}^{\text{2}}$ or 36.3% enhancement compared with a planar reference film without light-trapping features.
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