Year-end Sale % OFF 
Abstract
Theoretical analyies of light absorption in the microcrystalline transition-metal oxide semiconductors is proposed. The interface mechanism of light absorption, where the indirect interband electron transitions are caused by the possibility of the momentum nonconservation at the interface, is considered. This mechanism is found to be most important for crystallites, the size of which is about a few 10 nm or less.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
