Abstract
Abstract Colloidal zinc oxide (ZnO) nanocrystals generated from the high temperature and nonaqueous approache are attractive for use in solution-processed electrical and optoelectronic devices. However, the as-prepared colloidal ZnO nanocrystals by this approach are generally capped by ligands with long alkyl-chains, which is disadvantage for solution-processed devices due to hindering charge transport. Here we demonstrate an effective ligand exchange process for the colloidal ZnO nanocrystals from the high temperature and nonaqueous approach by using n-butylamine. The ligand exchange process was carefully characterized. The thin films based on colloidal ZnO nanocrystals with ligand exchange exhibited dramatically enhanced UV photoconductivity.
Highlights
Colloidal nanocrystals are attractive for use in large area and low-cost electronic and optoelectronic devices due to the unique combination of solid state properties and possibility of employing high throughput printing and coating techniques [1,2]
Colloidal zinc oxide (ZnO) nanocrystals have been utilized in several prototype solution-processed devices including field effect transistors, photodetectors, hybrid solar cells, memristive devices and organic solar cells [4,5,6,7,8,9]
A high temperature and nonaqueous approach, which was originated from the synthesis of CdSe quantum dots [10], was applied to the synthesis of ZnO nanocrystals
Summary
Colloidal nanocrystals are attractive for use in large area and low-cost electronic and optoelectronic devices due to the unique combination of solid state properties and possibility of employing high throughput printing and coating techniques [1,2]. We demonstrate ligand exchange of colloidal ZnO nanocrystals prepared by the high temperature and nonaqueous approach using n-butylamine. We fabricated metal-semiconductor-metal (MSM) devices based on colloidal ZnO nanocrystals to examine the effects of ligand exchange on ultraviolet (UV) photoconductive properties.
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