Ligand ENDOR on substitutional manganese in GaAs.

Abstract

In this paper Ga ligand electron-nuclear double resonance measurements are reported on the substitutional ${\mathrm{Mn}}^{2+}$ center in GaAs. On the basis of these experiments it is concluded that the ${\mathrm{Mn}}^{2+}$ center is substitutional on a Ga site. From the electron paramagnetic resonance linewidth and the crystal-field parameter an estimate is made of the hyperfine interaction with the nearest-neighbor As atoms. The data are compared to those obtained for ${\mathrm{Fe}}^{3+}$ in III-V semiconductors. It is found that ${\mathrm{Mn}}^{2+}$ has a more localized character than the ${\mathrm{Fe}}^{3+}$ center. Finally, the quadrupole interaction of the Ga atoms is discussed.